Electronic structure of transition metal/rare earth alternative high-K gate dielectrics: Interfacial band alignments and intrinsic defects

Microelectronics Reliability

Volumn 43, Issue 9-11, 2003, Pages 1417-1426

  Lucovsky, G ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; ELECTRONIC STRUCTURE; RARE EARTH COMPOUNDS; SILICA; SPECTROSCOPIC ANALYSIS; TRANSITION METALS;

INTRINSIC DEFECTS;

DIELECTRIC MATERIALS;

EID: 0042694512     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(03)00253-1     Document Type: Conference Paper

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