Electronic structure of carbon nitride thin films studied by X-ray spectroscopy techniques

Thin Solid Films

Volumn 471, Issue 1-2, 2005, Pages 19-34

  Hellgren, Niklas ^a,e   Guo, Jinghua ^b   Luo, Yi ^c   Såthe, Conny ^d   Agui, Akane ^d,f   Kashtanov, Stepan ^c   Nordgren, Joseph ^d   Ågren, Hans ^c   Sundgren, Jan Eric ^a,g  

^a LINKÖPING UNIVERSITY   (Sweden)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^d UPPSALA UNIVERSITY   (Sweden)

^e INTEL CORPORATION   (United States)

^f JAPAN ATOMIC ENERGY AGENCY   (Japan)

^g CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Carbon nitride; Thin film; X ray spectroscopy

Indexed keywords

ABSORPTION SPECTROSCOPY; AMORPHOUS FILMS; CARBON NITRIDE; CHEMICAL BONDS; ELECTRONIC STRUCTURE; EMISSION SPECTROSCOPY; FILM GROWTH; HIGH TEMPERATURE EFFECTS; LOW TEMPERATURE EFFECTS; MAGNETRON SPUTTERING; ULTRAVIOLET SPECTROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

NEAR EDGE X-RAY ABSORPTION FINE STRUCTURE SPECTROSCOPY (NEXAFS); ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY (UPS); X-RAY EMISSION SPECTROSCOPY (XES);

THIN FILMS;

EID: 10644238092     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2004.03.027     Document Type: Article

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