Photoluminescence related to the two-dimensional electron gas at a GaN/AlGaN heterointerface

Applied Physics Letters

Volumn 69, Issue 23, 1996, Pages 3456-3458

  Bergman, J P ^a   Lundstrom T ^a   Monemar, B ^a   Amano, H ^b   Akasaki, I ^b  

^a LINKÖPING UNIVERSITY   (Sweden)

^b MEIJO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; CARRIER CONCENTRATION; ELECTRON ENERGY LEVELS; ELECTRONS; EMISSION SPECTROSCOPY; HETEROJUNCTIONS; INTERFACES (MATERIALS); SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING;

ALUMINUM GALLIUM NITRIDE; DONOR ACCEPTOR PAIR; GALLIUM NITRIDE; TWO DIMENSIONAL ELECTRON GAS;

PHOTOLUMINESCENCE;

EID: 0030566417     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117250     Document Type: Article

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