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Applied Physics Letters

Volumn 73, Issue 23, 1998, Pages 3426-3428

Piezoelectric effects on the optical properties of GaN/AlxGa1-xN multiple quantum wells

(6) Kim, H S a Lin, J Y a Jiang, H X a Chow, W W b Botchkarev, A c Morkoc H c

a KANSAS STATE UNIVERSITY (United States)

b SANDIA NATIONAL LABORATORIES (United States)

c VIRGINIA COMMONWEALTH UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; ELECTRONS; MECHANICAL PROPERTIES; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; STRAIN; SUBSTRATES;

EXCITONIC TRANSITION; HOLE WAVE FUNCTION DISTRIBUTIONS;

PIEZOELECTRICITY;

EID: 0032494923 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.122786 Document Type: Article

Times cited : (112)

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