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Applied Physics Letters

Volumn 81, Issue 6, 2002, Pages 1038-1040

Achieving highly conductive AlGaN alloys with high Al contents

(5) Nam, K B a Li, J a Nakarmi, M L a Lin, J Y a Jiang, H X a

a KANSAS STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AL CONTENT; ALGAN; FREE ELECTRON CONCENTRATION; HALL EFFECT MEASUREMENT; HIGH AL CONTENT; ROOM TEMPERATURE; SAPPHIRE SUBSTRATES; SI-DOPING;

ALUMINUM; GALLIUM; HALL MOBILITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; SILICON;

GALLIUM ALLOYS;

EID: 79956005204 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1492316 Document Type: Article

Times cited : (85)

References (11)

1
- 21544461610
- jaJAPIAU 0021-8979
- H. Morkoc, S. Sstrite, G. B. Gao, M. E. Lin, B. Sverdlov, and M. Burns, J. Appl. Phys. 76, 1363 (1994). jap JAPIAU 0021-8979
- (1994) J. Appl. Phys. , vol.76 , pp. 1363
- Morkoc, H.¹ Sstrite, S.² Gao, G.B.³ Lin, M.E.⁴ Sverdlov, B.⁵ Burns, M.⁶

2
- 0029388336
- iee IEEPAD 0018-9219
- S. N. Mohammad, A. A. Salvador, and H. Morkoc, Proc. IEEE 83, 1306 (1995). iee IEEPAD 0018-9219
- (1995) Proc. IEEE , vol.83 , pp. 1306
- Mohammad, S.N.¹ Salvador, A.A.² Morkoc, H.³

3
- 0035851503
- apl APPLAB 0003-6951
- J. Li, K. B. Nam, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. 79, 3245 (2001). apl APPLAB 0003-6951
- (2001) Appl. Phys. Lett. , vol.79 , pp. 3245
- Li, J.¹ Nam, K.B.² Lin, J.Y.³ Jiang, H.X.⁴

4
- 0000671785
- apl APPLAB 0003-6951
- C. Skierbiszeski, T. Suski, M. Leszczynski, M. Shin, M. Skowronski, M. D. Bremser, and R. F. Davis, Appl. Phys. Lett. 74, 3833 (1999). apl APPLAB 0003-6951
- (1999) Appl. Phys. Lett. , vol.74 , pp. 3833
- Skierbiszeski, C.¹ Suski, T.² Leszczynski, M.³ Shin, M.⁴ Skowronski, M.⁵ Bremser, M.D.⁶ Davis, R.F.⁷

5
- 0035903418
- apl APPLAB 0003-6951
- V. Adivarahan, G. Simin, G. Tamulaitis, R. Srinivasan, J. Yang, and M. Asif Khan, Appl. Phys. Lett. 79, 1903 (2001). apl APPLAB 0003-6951
- (2001) Appl. Phys. Lett. , vol.79 , pp. 1903
- Adivarahan, V.¹ Simin, G.² Tamulaitis, G.³ Srinivasan, R.⁴ Yang, J.⁵ Khan, M.A.⁶

6
- 79958218795
- Internet address
- Internet address http://www.phys.ksu.edu/area/GaNgroup

7
- 0000873763
- apl APPLAB 0003-6951
- X. Zhang, S.-J. Chua, W. Liu, and K.-B. Chong, Appl. Phys. Lett. 72, 1890 (1998). apl APPLAB 0003-6951
- (1998) Appl. Phys. Lett. , vol.72 , pp. 1890
- Zhang, X.¹ Chua, S.-J.² Liu, W.³ Chong, K.-B.⁴

8
- 0001544387
- apl APPLAB 0003-6951
- Z. Q. Li, H. Chen, H. F. Liu, L. Wan, M. H. Zhang, Q. Juang, and J. M. Zhou, Appl. Phys. Lett. 76, 3765 (2000). apl APPLAB 0003-6951
- (2000) Appl. Phys. Lett. , vol.76 , pp. 3765
- Li, Z.Q.¹ Chen, H.² Liu, H.F.³ Wan, L.⁴ Zhang, M.H.⁵ Juang, Q.⁶ Zhou, J.M.⁷

9
- 0343291164
- apl APPLAB 0003-6951
- S. Ruvimov, Z. Liliental-Weber, T. Suski, J. W. Ager III, and J. Washburn, Appl. Phys. Lett. 69, 990 (1996). apl APPLAB 0003-6951
- (1996) Appl. Phys. Lett. , vol.69 , pp. 990
- Ruvimov, S.¹ Liliental-Weber, Z.² Suski, T.³ Ager Iii., J.W.⁴ Washburn, J.⁵

10
- 0000308769
- apl APPLAB 0003-6951
- K. C. Zeng, J. Y. Lin, H. X. Jiang, A. Salvador, G. Popovici, H. Tang, W. Kim, and H. Morkoc, Appl. Phys. Lett. 71, 1368 (1997). apl APPLAB 0003-6951
- (1997) Appl. Phys. Lett. , vol.71 , pp. 1368
- Zeng, K.C.¹ Lin, J.Y.² Jiang, H.X.³ Salvador, A.⁴ Popovici, G.⁵ Tang, H.⁶ Kim, W.⁷ Morkoc, H.⁸

11
- 0003443049
- Dover, New York
- J. I. Pankove, Optical Processes in Semiconductors (Dover, New York, 1971).
- (1971) Optical Processes in Semiconductors
- Pankove, J.I.¹

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