Effect of Si doping on the dislocation structure of GaN grown on the A-face of sapphire

Applied Physics Letters

Volumn 69, Issue 7, 1996, Pages 990-992

  Ruvimov, Sergei ^a,d   Liliental Weber, Zuzanna ^a   Suski, Tadeusz ^a,e   Ager III, Joel W ^a   Washburn, Jack ^a   Krueger, Joachim ^b   Kisielowski, Christian ^b   Weber, Eicke R ^b   Amano, H ^c   Akasaki, I ^c  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b University of California Berkeley   (United States)

^c MEIJO UNIVERSITY   (Japan)

^d IOFFE INSTITUTE   (Russian Federation)

^e POLISH ACADEMY OF SCIENCES   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0343291164     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.117105     Document Type: Article

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