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Volumn 189-190, Issue , 1998, Pages 511-515
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Doping characteristics and electrical properties of Mg-doped AlGaN grown by atmospheric-pressure MOCVD
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Author keywords
[No Author keywords available]
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Indexed keywords
ACTIVATION ENERGY;
CARRIER CONCENTRATION;
ELECTRIC CONDUCTIVITY OF SOLIDS;
MAGNESIUM;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
SEMICONDUCTOR DOPING;
SEMICONDUCTOR GROWTH;
NET ACCEPTOR CONCENTRATION;
SEMICONDUCTING ALUMINUM COMPOUNDS;
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EID: 0032093255
PISSN: 00220248
EISSN: None
Source Type: Journal
DOI: 10.1016/S0022-0248(98)00341-8 Document Type: Article |
Times cited : (101)
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References (15)
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