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Volumn 189-190, Issue , 1998, Pages 511-515

Doping characteristics and electrical properties of Mg-doped AlGaN grown by atmospheric-pressure MOCVD

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY OF SOLIDS; MAGNESIUM; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

EID: 0032093255     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00341-8     Document Type: Article
Times cited : (101)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.