Photo-ionization spectroscopy of traps in AlGaN/GaN high-electron mobility transistors

Journal of Electronic Materials

Volumn 31, Issue 12, 2002, Pages 1321-1324

  Wolter, M ^a   Javorka, P ^a   Fox, A ^a   Marso, M ^a   Luth H ^a   Kordos, P ^a   Carius, R ^a   Alam, A ^b   Heuken, M ^b  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b AIXTRON AG   (Germany)

Author keywords

AlGaN GaN HEMT; Defects; Photo ionization spectroscopy; Traps

Indexed keywords

ALUMINUM COMPOUNDS; CHEMICAL VAPOR DEPOSITION; DEFECTS; ELECTRON MOBILITY; ELECTRON TRAPS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOIONIZATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SAPPHIRE;

LAYER STRUCTURES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0036919463     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-002-0115-6     Document Type: Article

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