Photoionization spectroscopy of traps in doped and undoped AlGaN/GaN HEMTs

Physica Status Solidi C: Conferences

Volumn , Issue 1, 2002, Pages 82-85

  Wolter, M ^a   Javorka, P ^a   Marso, M ^a   Fox, A ^a   Carius, R ^a   Alam, A ^b   Heuken, M ^b   Kordos P ^a   Luth H ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b AIXTRON AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; GALLIUM NITRIDE; III-V SEMICONDUCTORS; NITRIDES; PHOTOIONIZATION; SAPPHIRE; SURFACE STATES; WIDE BAND GAP SEMICONDUCTORS;

ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; DEEP-LEVEL DEFECTS; MEASUREMENT TECHNIQUES; METAL-ORGANIC VAPOUR PHASE EPITAXY; PHOTOIONIZATION CROSS SECTION; PHOTOIONIZATION SPECTROSCOPY; POSITIVE GATE BIAS; TRAPPED ELECTRONS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0344546137     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200390122     Document Type: Conference Paper

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