Characterization of GaN-based metal-semiconductor field-effect transistors by comparing electroluminescence, photoionization, and cathodoluminescence spectroscopies

Journal of Applied Physics

Volumn 92, Issue 5, 2002, Pages 2401-2405

  Armani, N ^a   Grillo, V ^a   Salviati, G ^a   Manfredi, M ^b   Pavesi, M ^b   Chini, A ^c   Meneghesso, G ^c   Zanoni, E ^c  

^a IMEM CNR   (Italy)

^b UNIVERSITY OF PARMA   (Italy)

^c UNIVERSITY OF PADOVA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE SPECTROSCOPY; CONDUCTION CHANNEL; CURRENT COLLAPSE; DONOR-ACCEPTOR PAIR EMISSION; EMISSION PEAKS; ENERGY RANGES; EXPERIMENTAL TECHNIQUES; LOW TEMPERATURES; LUMINESCENCE MEASUREMENTS; METHODOLOGICAL COMPARISON; NEAR BAND EDGE; NON-RADIATIVE; SEMI-INSULATING; YELLOW BANDS;

CATHODOLUMINESCENCE; ELECTRON BEAMS; GALLIUM NITRIDE; LIGHT;

ELECTROLUMINESCENCE;

EID: 0036732255     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1495536     Document Type: Article

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