Investigations on the influence of traps in AlGaN/GaN HEMTs

Workshop on High Performance Electron Devices for Microwave and Optoelectronic Applications, EDMO

Volumn , Issue , 2001, Pages 149-154

  Wolter, M ^a   Javorka, P ^a   Marso, M ^a   Alam, A ^a   Carius, R ^a   Fox, A ^a   Heuken, M ^a   Luth H ^a   Kordos P ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENT MEASUREMENT; ELECTRON TRAPS; GALLIUM NITRIDE; HOLE TRAPS; HOT CARRIERS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOCURRENTS; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SUBSTRATES;

CURRENT COLLAPSE; DEEP LEVEL STATES; DRAIN CURRENT; OPTICAL QUENCHING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0035574592     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)

1. Drain current compression in GaN MODFETs under large-signal modulation at microwave frequencies
2. Observation of deep traps responsible for current collapse in GaN metal-semiconductor field-effect transistors
3. Optical quenching of the photoconductivity in n-type GaN
4. Optical quenching of photoconductivity in GaN photoconductors
5. Optimization of AlGaN/GaN HEMT performance
6. Photoionization spectroscopy of traps in GaN metal-semiconductor field-effect transistors
7. Deep impurities in semiconductors: II. The optical cross section
8. Persistent photoconductivity in n-type GaN
9. +-n GaN diodes