FT-IR study of a chemically amplified resist for X-ray lithography

Applied Spectroscopy

Volumn 57, Issue 7, 2003, Pages 842-849

  Tan, T L ^a   Kudryashov, V A ^a   Tan, B L ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

Chemically amplified resist by FT IR; Fourier transform infrared spectroscopy; X ray lithography of chemically amplified resist

Indexed keywords

DIFFUSION; ELECTRON BEAMS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; INFRARED RADIATION; MASKS; MICROELECTRONICS; SCANNING ELECTRON MICROSCOPY;

CHEMICALLY AMPLIFIED RESISTS (CAR);

X RAY LITHOGRAPHY;

4 VINYLPHENOL; 4-VINYLPHENOL; ACRYLIC ACID BUTYL ESTER; ACRYLIC ACID DERIVATIVE; N-BUTYL ACRYLATE; PHENOL DERIVATIVE; POLYMER;

ARTICLE; CHEMISTRY; INFRARED SPECTROSCOPY; METHODOLOGY; NANOTECHNOLOGY; PRINTING; SCANNING ELECTRON MICROSCOPY; X RAY;

ACRYLATES; MICROSCOPY, ELECTRON, SCANNING; NANOTECHNOLOGY; PHENOLS; POLYMERS; PRINTING; SPECTROSCOPY, FOURIER TRANSFORM INFRARED; X-RAYS;

EID: 0042769788     PISSN: 00037028     EISSN: None     Source Type: Journal    
DOI: 10.1366/000370203322102942     Document Type: Article

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