Electron beam lithography using chemically-amplified resist: Resolution and profile control

Microelectronic Engineering

Volumn 30, Issue 1-4, 1996, Pages 305-308

  Kudryashov, V A ^a   Krasnov, V V ^a   Huq, S E ^b   Prewett, P D ^b   Hall, T J ^c  

^a RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

^b RUTHERFORD APPLETON LABORATORY   (United Kingdom)

^c KING'S COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

IRRADIATION; MICROELECTRONIC PROCESSING; MOLECULAR WEIGHT DISTRIBUTION; PHOTORESISTS; SPATIAL VARIABLES CONTROL; THERMAL EFFECTS;

CHEMICALLY AMPLIFIED RESIST; POST EXPOSURE BAKE; PROFILE CONTROL; RESOLUTION CONTROL; SOFT BAKE;

ELECTRON BEAM LITHOGRAPHY;

EID: 0029732999     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(95)00251-0     Document Type: Article

References (4)

1. H Ito and C G Wilson ACS Symp. Ser. 242 (1984) 11
2. K Asakawa, T Ushirogouchi, M Nakase Journal of Photopolymer Science & Technology 7(3) (1994) 497.
3. V V Aristov, V A Dmitrieva, V A Kudryashov, K Pfeifer, H J Lorkovski Microelectronic Engineering 11 (1990) 553.
4. V A Kudryashov, T B Borzenko, V V Krasnov, V V Aristov Microelectronic Engineering 23 (1994) 307-310.