High resolution studies on Hoechst AZ PN114 chemically amplified resist

Microelectronic Engineering

Volumn 30, Issue 1-4, 1996, Pages 327-330

  Macintyre, D ^a   Thoms, S ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFRACTION GRATINGS; ELECTRON BEAM LITHOGRAPHY; ELECTRON BEAMS; ETCHING; INSPECTION; SCANNING ELECTRON MICROSCOPY; SHOT NOISE; SUBSTRATES;

DRY ETCH RESISTANCE; NEGATIVE ELECTRON BEAM RESIST; POST EXPOSURE BAKE; RESOLVING LINEWIDTHS; TRANSFER PATTERNS;

PHOTORESISTS;

EID: 0029732738     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/0167-9317(95)00256-1     Document Type: Article

References (5)

1. K. Early, D.M. Tennant, D.Y. Jeon, P.P. Mulgrew, A.A. MacDowell and O.R. Wood II, J. Vac. Sci. Technol. B 10(6) (1992) 2600
2. I.W. Ranglelow, P. Hudek, I. Kostic, Z. Borkowicz and G. Stangl, Microelectronic Engineering 23 (1994) 283
3. 'Handling Recommendations for e-beam Negative-Tone Resist AZ PN114', Hoechst Celanese Corporation (1991)
4. S. Thoms, S.P. Beaumont, C.D.W. Wilkinson, J. Vac. Sci. Technol. B 10(6) (1989) 1823
5. Microelectronic Engineering 30 (1996) 333-336