Investigation of process latitude in E-beam lithography for positive CAR UVIII using novel volumetric linewidth measurement

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4226, Issue , 2000, Pages 124-132

  Kudryashov, V A ^a   Prewett, P D ^a   Michette, A G ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Chemically amplified resists; E beam lithography; Linewidth measuring; Metrology; Process latitude; Resists; VUIII

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; OPTIMIZATION; PHOTORESISTS; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; THICKNESS CONTROL;

CHEMICALLY AMPLIFIED RESISTS; PROCESS LATITUDE; VOLUMETRIC LINEWIDTH MEASUREMENT TECHNIQUE;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0034453863     PISSN: 0277786X     EISSN: None     Source Type: Journal    
DOI: 10.1117/12.404847     Document Type: Article

References (2)

1. A new e-beam method for gray scale 3D optical elements
2. A simple new method for the investigation of process latitude in e-beam lithography with positive resists