Temperature dependence of MgO/GaN MOSFET performance

Solid-State Electronics

Volumn 47, Issue 9, 2003, Pages 1601-1604

  Cho, Hyun ^a   Lee, K P ^b   Gila, B P ^b   Abernathy, C R ^b   Pearton, S J ^b   Ren, F ^b  

^a Miryang National University   (South Korea)

^b J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

Author keywords

Dc characteristics; Gate breakdown voltage; MgO GaN MOSFET; Saturation drain current; Temperature dependence

Indexed keywords

COMPUTER SIMULATION; DIFFUSION IN SOLIDS; ELECTRIC BREAKDOWN; GALLIUM NITRIDE; HIGH TEMPERATURE APPLICATIONS; MAGNESIA; THERMAL EFFECTS;

GATE BREAKDOWN VOLTAGE;

MOSFET DEVICES;

EID: 0038378755     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00089-3     Document Type: Article

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