Characterization of nitrogen-rich silicon nitride films grown by the electron cyclotron resonance plasma technique

Semiconductor Science and Technology

Volumn 18, Issue 7, 2003, Pages 633-641

  Wang, L ^a   Reehal, H S ^a   Martinez F L ^b   San Andres E ^c   Del Prado, A ^c  

^a LONDON SOUTH BANK UNIVERSITY   (United Kingdom)

^b TECHNICAL UNIVERSITY OF CARTAGENA   (Spain)

^c UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; DEPOSITION; ELECTRON CYCLOTRON RESONANCE; ELLIPSOMETRY; FILM GROWTH; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MICROWAVES; PARTIAL PRESSURE; PLASMA APPLICATIONS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; STOICHIOMETRY;

ELASTIC RECOIL DETECTION ANALYSIS; ELECTRON CYCLOTRON RESONANCE PLASMA TECHNIQUE; GAS FLOW RATIO;

SILICON NITRIDE;

EID: 0037698261     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/7/306     Document Type: Article

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