Electrical properties of rapid thermally annealed SiNx:H/Si structures characterized by capacitance-voltage and surface photovoltage spectroscopy

Semiconductor Science and Technology

Volumn 16, Issue 7, 2001, Pages 534-542

  Martinez F L ^a   Del Prado, A ^a   Martil I ^a   Gonzalez Diaz G ^a   Kliefoth, K ^b   Fussel W ^b  

^a UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

^b HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; CHEMICAL BONDS; ELECTRIC POTENTIAL; ELECTRON CYCLOTRON RESONANCE; ENERGY GAP; LEAKAGE CURRENTS; PERCOLATION (SOLID STATE); PLASMA APPLICATIONS; RAPID THERMAL ANNEALING; SPECTROSCOPIC ANALYSIS; STOICHIOMETRY; THERMAL EFFECTS;

CAPACITANCE-VOLTAGE MEASUREMENTS; SURFACE VOLTAGE SPECTROSCOPY;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0035397891     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/16/7/302     Document Type: Article

References (28)