Investigation of the properties of plasma-enhanced chemical vapor deposited silicon nitride and its effect on silicon surface passivation

Journal of Applied Physics

Volumn 83, Issue 11, 1998, Pages 5885-5889

  Cai, L ^a,c   Rohatgi, A ^a   Han, S ^a   May, G ^a   Zou, M ^b  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^b GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^c Spectrolab Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001760213     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367450     Document Type: Article

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