Hydrogenated amorphous silicon-nitrogen alloys, a-SiNx:Hy: A wide band gap material for optoelectronic devices

Journal of Applied Physics

Volumn 79, Issue 3, 1996, Pages 1730-1735

  Demichelis, F ^a   Crovini, G ^a   Giorgis, F ^a   Pirri, C F ^a   Tresso, E ^a  

^a POLITECNICO DI TORINO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; COMPOSITION; ELECTRIC CONDUCTIVITY MEASUREMENT; ELECTRON SPIN RESONANCE SPECTROSCOPY; ELECTRONIC PROPERTIES; ENERGY GAP; NITROGEN; PHOTOCONDUCTIVITY; RUTHERFORD BACKSCATTERING SPECTROSCOPY; THIN FILMS;

DARK CONDUCTIVITY; DEFECT DENSITY; HYDROGENATED AMORPHOUS SILICON NITRIDE; OPTICAL GAP; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; PREEXPONENTIAL CONDUCTIVITY; SPIN DENSITY;

SILICON NITRIDE;

EID: 0030085204     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.360961     Document Type: Article

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