Low interface trap density in rapid thermally annealed Al/SiNx:H/InP metal-insulator-semiconductor devices

Applied Physics Letters

Volumn 74, Issue 7, 1999, Pages 991-993

  Redondo, E ^a   Blanco, N ^a   Martil I ^a   Gonzalez Diaz G ^a  

^a UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000925708     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123433     Document Type: Article

References (14)

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