Thermally induced improvements on SiNx:H/lnP devices

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 17, Issue 4, 1999, Pages 2178-2182

  Redondo, E ^a   Blanco, N ^a   Martil I ^a   Gonzalez Diaz G ^a   Pelaez, R ^b   Duenas S ^b   Castan H ^b  

^a UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

^b UNIVERSITY OF VALLADOLID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALED SAMPLES; BOTTOM LAYERS; CAPACITANCE VOLTAGE; DEPOSITION TEMPERATURES; DLTS; ELECTRICAL BEHAVIORS; ELECTRON CYCLOTRON RESONANCE PLASMA; FILM COMPOSITION; INP; INTERFACE CHARACTERISTIC; INTERFACE TRAP DENSITY; MODERATE TEMPERATURE; NITROGEN ATOM; SURFACE PASSIVATION; TEMPERATURE RANGE; THERMAL ANNEALING TREATMENT; THERMALLY INDUCED;

CYCLOTRONS; DEEP LEVEL TRANSIENT SPECTROSCOPY; PASSIVATION; PHOSPHORUS; PLASMA DEPOSITION; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SILICON NITRIDE;

ATMOSPHERIC TEMPERATURE;

EID: 0000333520     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582107     Document Type: Conference Paper

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