Influence of electron cyclotron resonance nitrogen plasma exposure on the electrical characteristics of SiNx:H/InP structures

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 1, 2001, Pages 186-191

  Redondo, E ^a   Martil I ^a   Gonzalez Diaz G ^a   Castan H ^b   Duenas S ^b  

^a UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

^b UNIVERSITY OF VALLADOLID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; ELECTRON CYCLOTRON RESONANCE; INTERFACES (MATERIALS); MISFET DEVICES; NITROGEN; PASSIVATION; PLASMA ETCHING; RAPID THERMAL ANNEALING; SILICON NITRIDE; SURFACE CLEANING;

INTERFACE TRAP DENSITY; PLASMA EXPOSURE; SURFACE CONDITIONING;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 1642460192     PISSN: 0734211X     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1339010     Document Type: Article

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