Electrical properties of metal-insulator-semiconductor structures with silicon nitride dielectrics deposited by low temperature plasma enhanced chemical vapor deposition distributed electron cyclotron resonance

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 15, Issue 6, 1997, Pages 3143-3153

  Hugon, M C ^a   Delmotte, F ^a   Agius, B ^a   Courant, J L ^b  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b ORANGE LABS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC INSULATING MATERIALS; ELECTRIC VARIABLES MEASUREMENT; ELECTRON CYCLOTRON RESONANCE; LOW TEMPERATURE OPERATIONS; PLASMA APPLICATIONS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING SILICON; SILICON NITRIDE;

ELECTRIC STRESS; INTERFACE STATE DENSITY; POOLE-FRENKEL EMISSION; POSTMETALLIZATION ANNEALING;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0031271627     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.580859     Document Type: Article

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