Properties of "stoichiometric" silicon oxynitride films

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1503-1508

  He, Le Nian ^a   Inokuma, Takao ^a   Hasegawa, Seiichi ^a  

^a KANAZAWA UNIVERSITY   (Japan)

Author keywords

Chemical structure; Dangling bonds; Silicon oxynitride films; Stress; Vibrational absorption

Indexed keywords

ABSORPTION; BAND STRUCTURE; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; DIELECTRIC PROPERTIES; FILM PREPARATION; GLOW DISCHARGES; MIXTURES; NITRIDES; PLASMA APPLICATIONS; STOICHIOMETRY; STRUCTURE (COMPOSITION);

CHEMICAL STRUCTURE; DANGLING BOND; SILICON OXYNITRIDE FILMS; STRETCHING ABSORPTION BANDS; VIBRATIONAL ABSORPTION;

AMORPHOUS FILMS;

EID: 0030078859     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1503     Document Type: Article

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