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Physical Review B - Condensed Matter and Materials Physics

Volumn 63, Issue 24, 2001, Pages 2453201-2453211

Molecular models and activation energies for bonding rearrangement in plasma-deposited α-SiNx: H dielectric thin films treated by rapid thermal annealing

(4) Martinez F L a Del Prado, A a Martil I a Gonzalez Diaz G a

a UNIVERSIDAD COMPLUTENSE DE MADRID (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

SILICON NITRIDE;

ARTICLE; CHEMICAL BINDING; CHEMICAL REACTION KINETICS; DESORPTION; ENERGY; HYDROGEN BOND; INFRARED SPECTROSCOPY; MOLECULAR INTERACTION; MOLECULAR MODEL; MOLECULAR STABILITY; TEMPERATURE;

EID: 0034904807 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (37)

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