Gate quality Si3N4 prepared by low temperature remote plasma enhanced chemical vapor deposition for III-V semiconductor-based metal-insulator-semiconductor devices

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 14, Issue 4, 1996, Pages 2674-2683

  Park, D G ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPOSITION EFFECTS; ELECTRIC PROPERTIES; ELECTRON CYCLOTRON RESONANCE; FOURIER TRANSFORM INFRARED SPECTROSCOPY; MIS DEVICES; NITROGEN; REFRACTIVE INDEX; SEMICONDUCTING FILMS; SILANES; THERMAL EFFECTS;

BUFFERED SOLUTIONS; ETCH RATES; GAS RATIO; REMOTE PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SUBSTRATE TEMPERATURE;

SILICON NITRIDE;

EID: 0030194036     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.589003     Document Type: Article

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