Influence of rapid thermal annealing processes on the properties of SiNx:H films deposited by the electron cyclotron resonance method

Journal of Non-Crystalline Solids

Volumn 227-230, Issue PART 1, 1998, Pages 523-527

  Martinez F L ^a   Martil I ^a   Gonzalez Diaz G ^a   Selle, B ^b   Sieber, I ^b  

^a UNIVERSIDAD COMPLUTENSE DE MADRID   (Spain)

^b HAHN MEITNER INSTITUT   (Germany)

Author keywords

Electron cyclotron resonance method; Rapid thermal annealing process; SiNx:H films

Indexed keywords

ANNEALING; CHEMICAL BONDS; CROSSLINKING; ELECTRON CYCLOTRON RESONANCE; OPTICAL PROPERTIES; SILICON NITRIDE; THERMAL EFFECTS; THIN FILMS;

ELECTRON CYCLOTRON RESONANCE PLASMA METHOD;

AMORPHOUS FILMS;

EID: 0032068957     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00092-1     Document Type: Article

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