Damage to III-V devices during electron cyclotron resonance chemical vapor deposition

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 17, Issue 4, 1999, Pages 2183-2187

  Lee, J W ^a   Mackenzie, K D ^a   Johnson, D ^a   Shul, R J ^b   Hahn, Y B ^c,d   Hays, D C ^c   Abernathy, C R ^c   Ren, F ^c   Pearton, S J ^c  

^a Qualtx Technology Inc   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

^c University of Florida   (United States)

^d Chonbuk National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BASE LAYERS; COMPLEX FORMATIONS; ECR SOURCE; ELECTRON CYCLOTRON RESONANCE CHEMICAL VAPOR DEPOSITION; GAAS; HIGH DEPOSITION RATES; IN-CHANNELS; ION DAMAGE; MESFETS; METAL SEMICONDUCTORS; PASSIVATING LAYER; PLASMA COMPOSITION; SHEET RESISTIVITY;

BIPOLAR TRANSISTORS; CHEMICAL VAPOR DEPOSITION; CHUCKS; CYCLOTRONS; DOPING (ADDITIVES); ELECTRON CYCLOTRON RESONANCE; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; MESFET DEVICES; PRESSURE EFFECTS; SILICON NITRIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0038555019     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.582109     Document Type: Conference Paper

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