Ultrathin fluorinated silicon nitride gate dielectric films formed by remote plasma enhanced chemical vapor deposition employing NH3 and SiF4

Journal of Applied Physics

Volumn 90, Issue 4, 2001, Pages 1955-1961

  Ohta, Hiroyuki ^a   Hori, Masaru ^a   Goto, Toshio ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035881848     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1381556     Document Type: Article

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