Depth-dependent investigation of defects and impurity doping in GaN/sapphire using scanning electron microscopy and cathodoluminescence spectroscopy

Journal of Applied Physics

Volumn 91, Issue 10 I, 2002, Pages 6729-6738

  Sun, X L ^a   Goss, S H ^a   Brillson, L J ^a   Look, D C ^b   Molnar, R J ^c  

^a Ohio State University   (United States)

^b WRIGHT STATE UNIVERSITY   (United States)

^c MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE SPECTROSCOPY; CUBIC PHASE; DEFECT EMISSION; DEFECTS AND IMPURITIES; DEPTH DEPENDENTS; DONOR LEVELS; ELECTROCHEMICAL CAPACITANCE-VOLTAGE PROFILING; ELECTRONIC DEFECTS; GAN/SAPPHIRE; HYDRIDE VAPOR PHASE EPITAXY; INTERFACE DEFECTS; LOW TEMPERATURES; NANO SCALE; OUT-DIFFUSION; SECONDARY ELECTRON MICROSCOPY; SYSTEMATIC VARIATION; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT;

ALUMINUM; CATHODOLUMINESCENCE; ELECTRONIC PROPERTIES; GALLIUM NITRIDE; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DOPING;

DEFECTS;

EID: 0037094620     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1454187     Document Type: Article

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