Direct observation of bulk and interface states in GaN on sapphire grown by hydride vapor phase epitaxy

Materials Research Society Symposium - Proceedings

Volumn 639, Issue , 2001, Pages

  Goss, S H ^a   Young, A P ^a   Brillson, L J ^a   Look, D C ^a   Molnar, R J ^a  

^a OHIO STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; INTERFACES (MATERIALS); SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SPECTROSCOPY; ULTRAHIGH VACUUM; VAPOR PHASE EPITAXY;

CATHODOLUMINESCENCE SPECTROSCOPY; CROSS SECTIONAL SECONDARY ELECTRON IMAGING; HYDRIDE VAPOR PHASE EPITAXY; ULTRAHIGH VACUUM SCANNING ELECTRON MICROSCOPE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0035559583     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)