Influence of growth rate on the structure of thick GaN layers grown by HVPE

Journal of Crystal Growth

Volumn 208, Issue 1, 2000, Pages 18-26

  Paskova, T ^a   Goldys, E M ^b   Yakimova, R ^a   Svedberg, E B ^a   Henry, A ^a   Monemar, B ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b MACQUARIE UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; FILM GROWTH; HYDRIDES; INTERFACES (MATERIALS); MORPHOLOGY; NITRIDES; PHOTOLUMINESCENCE; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH; VAPOR PHASE EPITAXY;

GALLIUM NITRIDE; HYDRIDE VAPOR PHASE EPITAXY (HVPE);

SEMICONDUCTING FILMS;

EID: 0033889910     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(99)00487-X     Document Type: Article

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