Low-temperature luminescence of exciton and defect states in heteroepitaxial GaN grown by hydride vapor phase epitaxy

Applied Physics Letters

Volumn 74, Issue 16, 1999, Pages 2358-2360

  Skromme, B J ^a   Jayapalan, J ^a   Vaudo, R P ^b   Phanse, V M ^b  

^a Arizona State University   (United States)

^b Epitronics   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; DISLOCATIONS (CRYSTALS); EXCITONS; IONIZATION OF SOLIDS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM COMPOUNDS; SPECTROSCOPIC ANALYSIS; VAPOR PHASE EPITAXY;

HETEROEPITAXIAL GALLIUM NITRIDES; HYDRIDE VAPOR PHASE EPITAXY (HVPE); IONIZATION ENERGY;

SEMICONDUCTING FILMS;

EID: 0032615223     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.123850     Document Type: Article

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