On the nature of the 3.41 eV luminescence in hexagonal GaN

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 556-560

  Fischer, S ^a   Steude, G ^a   Hofmann, D M ^a   Kurth, F ^a   Anders, F ^a   Topf, M ^a   Meyer, B K ^a   Bertram, F ^b   Schmidt, M ^b   Christen, J ^b   Eckey, L ^c   Holst, J ^c   Hoffmann, A ^c   Mensching, B ^d   Rauschenbach, B ^d  

^a JUSTUS LIEBIG UNIVERSITY   (Germany)

^b OTTO VON GUERICKE UNIVERSITY   (Germany)

^c TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^d UNIVERSITY OF AUGSBURG   (Germany)

Author keywords

Exciton; Gallium nitride; Ion damage; Luminescence

Indexed keywords

ACTIVATION ENERGY; CATHODOLUMINESCENCE; CRYSTAL DEFECTS; ELECTRON EMISSION; EXCITONS; ION IMPLANTATION; PHOTOLUMINESCENCE;

EXCITONIC RECOMBINATION; GALLIUM NITRIDE;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0032091585     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00194-8     Document Type: Article

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