Fine structure of the 3.42 eV emission band in GaN

Materials Research Society Symposium - Proceedings

Volumn 395, Issue , 1996, Pages 571-576

  Fischer, S ^a   Wetzel, C ^a   Walukiewicz, W ^a   Haller, E E ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; EXCITONS; HIGH TEMPERATURE OPERATIONS; LASERS; OXYGEN; PHOTOLUMINESCENCE; PRESSURE; VAPOR PHASE EPITAXY;

DONOR LEVEL; EXCITONIC LINE; GALLIUM NITRIDE; HIGH TEMPERATURE VAPOR PHASE EPITAXY; LUMINESCENCE BAND; MASS THEORY; STIMULATED LASER ACTIVITY; STRUCTURAL DEFECTS;

NITRIDES;

EID: 0029726831     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (19)