Reactive MBE growth of GaN and GaN:H on GaN/SiC substrates

Materials Research Society Symposium - Proceedings

Volumn 449, Issue , 1997, Pages 215-220

  Johnson, M A L ^a   Yu, Z ^a   Boney, C ^a   Hughes, W C ^a   Cook, J W ^a   Schetzina, J F ^a   Zhao, H ^a   Skromme, B J ^a   Edmond, J A ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BINDING ENERGY; EMISSION SPECTROSCOPY; MOLECULAR BEAM EPITAXY; NITRIDES; PHOTOLUMINESCENCE; PLASMA APPLICATIONS; SEMICONDUCTOR DOPING; SEMICONDUCTOR GROWTH;

GALLIUM NITRIDE; REACTIVE MOLECULAR BEAM EPITAXY;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0030644981     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)