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Volumn 87, Issue 12, 2000, Pages 8766-8772

Dissociation of Al2O3(0001) substrates and the roles of silicon and oxygen in n-type GaN thin solid films grown by gas-source molecular beam epitaxy

(6) Van Nostrand, J E a Solomon, J a,b Saxler, A a Xie, Q H a,c Reynolds, D C a,c Look, D C a,c

a AIR FORCE RESEARCH LABORATORY (United States)

b UNIVERSITY OF DAYTON (United States)

c WRIGHT STATE UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000435161 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.373608 Document Type: Article

Times cited : (34)

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