Electronic near-surface defect states of bare and metal covered n-GaN films observed by cathodoluminescence spectroscopy

Journal of Electronic Materials

Volumn 28, Issue 3, 1999, Pages 308-313

  Young, A P ^a   Schafer J ^b,c   Brillson, L J ^a,c   Yang, Y ^d   Xu, S H ^d   Cruguel, H ^d   Lapeyre, G J ^d   Johnson, M A L ^e   Schetzina, J F ^e  

^a Ohio State University   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c OHIO STATE UNIVERSITY   (United States)

^d MONTANA STATE UNIVERSITY   (United States)

^e NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL DEFECTS; ELECTRON EMISSION; ENERGY GAP; FERMI LEVEL; METALLIZING; NITRIDES; OPTICAL PROPERTIES; SCHOTTKY BARRIER DIODES; SEMICONDUCTING GALLIUM COMPOUNDS; SPECTROSCOPIC ANALYSIS; SURFACE PROPERTIES;

GALLIUM NITRIDE;

SEMICONDUCTING FILMS;

EID: 0344578017     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0032-z     Document Type: Article

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