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Volumn 189-190, Issue , 1998, Pages 1-7

Basic III-V nitride research - Past, present and future

Author keywords

III V nitrides; Material quality; Physical properties

Indexed keywords

ELECTRONIC PROPERTIES; NITRIDES; POINT DEFECTS;

EID: 0032092349     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00145-6     Document Type: Article
Times cited : (40)

References (76)
  • 26
    • 0026414620 scopus 로고
    • N. Koide, H. Kato, M. Sassa, A. Yamasaki, K. Manabe, M. Hashimoto, H. Amano, K. Hiramatsu, I. Akasaki, J. Crystal Growth 115 (1991) 639; S. Nakamura, T. Mukai, M. Senoh, Jpn. J. Appl. Phys. 31 (1992) 195.
    • (1992) Jpn. J. Appl. Phys. , vol.31 , pp. 195
    • Nakamura, S.1    Mukai, T.2    Senoh, M.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.