The surface science of semiconductor processing: Gate oxides in the ever-shrinking transistor

Surface Science

Volumn 500, Issue 1-3, 2002, Pages 859-878

  Weldon, Marcus K ^a   Queeney, K T ^b   Eng Jr , Joseph ^c   Raghavachari, Krishnan ^c   Chabal, Yves J ^c  

^a LUCENT TECHNOLOGIES   (United States)

^b SMITH COLLEGE   (United States)

^c AGERE SYSTEMS   (United States)

Author keywords

Ab initio quantum chemical methods and calculations; Low index single crystal surfaces; Oxidation; Silicon; Silicon oxides; Vibrations of adsorbed molecules

Indexed keywords

GATES (TRANSISTOR); INTERFACES (MATERIALS); MICROELECTRONIC PROCESSING; OXIDATION; QUANTUM THEORY; SILICA; SINGLE CRYSTALS;

LOW INDEX SINGLE CRYSTAL SURFACES;

SURFACE PHENOMENA;

EID: 0037051025     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(01)01585-0     Document Type: Article

References (62)

1. The foundation of the silicon age
2. Key steps to the integrated circuit
3. 2000 Begins with a revised industry roadmap
4. 2O between 800 and 1200 °C: Incorporated nitrogen and interfacial roughness
5. Scaling the gate dielectric: Materials, integration and reliability
6. The search continues for high-k gate dielectrics
7. Aluminum persists as the copper age dawns
8. Copper metalization for ULSI and beyond
9. Copper-based metallization in ULSI structure. Part II: Is Cu ahead of its time as an on-chip interconnect material?
10. Low-k dielectrics: Will spin-on or low-k prevail?
11. Integration of low-k dielectric materials into sub-0.25-μm interconnects
12. Materials issues and characterization of low-k dielectric materials
13. The electronic structure at the atomic scale of ultrathin gate oxides
14. Energetics of silicon suboxides
15. 2/Si interface
16. 2 transformation: Interfacial structure and mechanism
17. 2 interface
18. 2 interface
19. 2 interface: New structures and well-defined model systems
20. The role of second-nearest neighbor effects in photoemission: Are silicon surfaces and interfaces special?
21. 12 clusters on Si(0 0 1): First-principles calculation of Si 2p core-level shifts
22. 2 interfaces derived from spherosiloxane clusters: Implications for Si 2p photoemission spectroscopy
23. 2 systems
24. 2 interface of thermally oxidized silicon
25. 2
26. 2O-induced oxidation of Si(0 0 1)-(2 × 1)
27. Heterogeneous nucleation of oxygen on silicon: Hydroxyl-mediated inter-dimer coupling on Si(0 0 1)-2 × 1
28. Silicon epoxide: Unexpected intermediate during silicon oxide formation
29. Mechanistic studies of silicon oxidation
30. Oxidation of Si(0 0 1)-2 × 1: Thermodynamics of oxygen insertion and migration
31. Pathways for initial water-induced oxidation of Si(0 0 1)
32. Simultaneous STEM imaging and electron energy loss spectroscopy with atomic column sensitivity
33. 2 interface from first principles
34. Effects of certain chemical treatments and ambient atmospheres on surface properties of silicon
35. Formation of silicon-hydrogen bonds on the surface of microcrystalline silicon covered with silicon oxides by HF treatment
36. Unusually low surface-recombination velocity on silicon and germanium surfaces
37. Infrared absorption spectroscopy of Si(1 1 1) surfaces after HF treatment: Hydrogen termination and surface morphology
38. The passivation of electrically active sites on the surface of crystalline silicon by fluorination
39. Surface chemistry of hydrogen fluoride passivated silicon: X-ray photoelectron and ion scattering spectroscopy results
40. Mechanism of HF etching of silicon surfaces: A theoretical understanding of hydrogen passivation
41. Ideal hydrogen termination of the Si(1 1 1) surface
42. The formation of etch hillocks during step-flow etching of Si(1 1 1)
43. Extracting site-specific reaction rates from steady state surface morphologies: Kinetic Monte Carlo simulations of aqueous Si(1 1 1) etching
44. The site-specific reactivity of isopropanol on aqueous silicon etching: Controlling morphology with surface chemistry
45. Micromachined test pattern approach to determining Si etch rates
46. 2O surface
47. Surface infrared study of Si(1 0 0)-(2 × 1) H
48. Evidence of dissociation of water on the Si(1 0 0)-2 × 1 surface
49. Thermodynamic stability of binary oxides in contact with silicon
50. Structural properties of thin films of high dielectric constant materials on silicon
51. 5 in metal-oxide-metal capacitor structures
52. Local atomic structure and chemical stability of high-k gate dielectrics for advanced silicon metal oxide semiconductor devices
53. 5/Si interface
54. Crystalline oxides on silicon: The first five monolayers