The foundation of the silicon age

Bell Labs Technical Journal

Volumn 2, Issue 4, 1997, Pages 3-14

  Ross, Ian M ^a,b  

^a Semiconductor Laboratory

^b Semiconduct Device Electron Tube L ^*

Author keywords

[No Author keywords available]

Indexed keywords

PATENTS AND INVENTIONS; POINT CONTACTS; SEMICONDUCTOR DEVICE MANUFACTURE;

SILICON AGE;

TRANSISTORS;

EID: 0031220993     PISSN: 10897089     EISSN: None     Source Type: Journal    
DOI: 10.1002/bltj.2080     Document Type: Article

References (25)

1. J. E. Lilienfeld, "Method and Apparatus for Controlling Electric Currents," U.S. Patent 1,745,175, filed Oct. 8, 1926, issued Jan. 28, 1930; "Amplifier for Electric Currents," U.S. Patent 1,877,140, filed Dec. 8, 1928, issued Sept. 13, 1932; "Device for Controlling Electric Current," U.S. Patent 1,900,018, filed Mar. 28, 1928, issued Mar. 7, 1933.
2. J. Bardeen, "Surface States and Rectification at a Metal Semi-Conductor Contact," Physical Review, Vol. 71, No. 10, May 15, 1947, pp. 717-727.
3. A History of Engineering & Science in the Bell System, Physical Sciences (1925-1980), edited by S. Millman, AT&T Bell Laboratories, 1983, p. 98.
4. J. Bardeen and W. H. Brattain, "The Transistor, A Semi-Conductor Triode," Physical Review, Vol. 74, No. 2, July 15, 1947, pp. 230-231.
5. A History of Engineering & Science in the Bell System, Physical Sciences (1925-1980), p. 97.
6. A History of Engineering and Science in the Bell System, Physical Sciences (1925-1980), p. 101.
7. W. Shockley, "The Theory of p-n Junctions in Semiconductors and p-n Junction Transistors," Bell System Technical Journal, Vol. 28, No. 4, July 1949, pp. 435-489.
8. J. N. Shive, "Double-Surface Transistor," Physical Review, Vol. 75, No. 4, Feb. 15, 1948, pp. 689-690.
9. G. K. Teal and J. B. Little, "Growth of Germanium Single Crystals," Physical Review, Vol. 78, No. 5, June 1, 1950, p. 647.
10. W. Shockley, G. L. Pearson, and J. R. Haynes, "Hole Injection in Germanium - Quantitative Studies and Filamentary Transistors," Bell System Technical journal, Vol. 28, No. 4, July 1949, pp. 344-366.
11. W. Shockley, M. Sparks, and G. K. Teal, "p-n Junction Transistors," Physical Review, Vol. 83, No. 1, July 1, 1951, pp. 151-162.
12. W. Shockley, Electrons and Holes in Semiconductors, D. Van Nostrand, Princeton, New Jersey, 1950.
13. J. E. Saby, "Fused Impurity P-N-P Transistors," Proceedings of the IRE, Vol. 40, November 1952, pp. 1358-1360.
14. A History of Engineering and Science in the Bell System, Physical Sciences (1925-1980), p. 582.
15. G. K. Teal, "Single Crystals of Germanium and Silicon - Basic to the Transistor and Integrated Circuit," IEEE Transactions on Electron Devices, Vol. Ed.-23, No. 7, July 1976, pp. 621-639.
16. C. A. Lee, "A High-Frequency Diffused Base Germanium Transistor," Bell System Technical Journal, Vol. 35, No. 1, January 1956, pp. 23-34.
17. M. Tanenbaum and D. E. Thomas, "Diffused Emiter and Base Silicon Transistors," Bell System Technical Journal, Vol. 35, No. 1, January 1956, pp. 1-22.
18. H. C. Theuerer, J. J. Kleimack, H. H. Loar, and H. Christensen, "Epitaxial Diffused Transistors." Proceedings of the IRE, Vol. 48, September 1960, pp. 1642-1634.
19. C. J. Frosch and I. Derick, "Surface Protection and Selective Masking During Diffusion in Silicon," Journal of the Electrochemical Society, Vol. 104, September 1957, pp. 547-552.
20. J. Andrus and W. L. Bond, "Photoengraving in Transistor Fabrication," in Transistor Technology, Vol. III, edited by F. J. Biondi, D. Van Nostrand, Princeton, New Jersey, 1958, pp. 151-162.
21. M. M. Atalla, E. Tennenbaum, and E. J. Scheiber, "Stabilization of Silicon Surfaces by Thermally Grown Oxides," Bell System Technical Journal, Vol. 28, No. 4, May 1959, pp. 749-783.
22. J. A. Hoerni, "Planar Silicon Diodes and Transistors," IRE Transactions on Electron Devices, Vol. 8, Mar. 1961, p. 178.
23. G. E. Moore and R. N. Noyce, "Method for Fabricating Transistors," U. S. Patent 3,108,359, filed June 30, 1959, issued Oct. 29, 1963.
24. J. S. Kilby, "Invention of the Integrated Circuit." IEEE Transactions on Electron Devices, Vol. ED-23, No. 7, July 1976, pp. 648-654.
25. R. N. Noyce, "Semiconductor Device-and-Lead Structure," U. S. Patent 2,981,877, filed July 30, 1959, issued April 25, 1961.