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Volumn 108, Issue 13, 1998, Pages 5542-5553

Extracting site-specific reaction rates from steady state surface morphologies: Kinetic Monte Carlo simulations of aqueous Si(111) etching

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Indexed keywords


EID: 0000910417     PISSN: 00219606     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.475944     Document Type: Article
Times cited : (81)

References (30)
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    • S. Roura and C. Martinez, in Algorithms - ESA'96, edited by J. Diaz and M. Serna (Springer, Berlin, 1996), p. 91.
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    • Roura, S.1    Martinez, C.2
  • 20
    • 85034287931 scopus 로고    scopus 로고
    • note
    • In this context, the reaction mechanism (e.g., step flow, pit nucleation and growth) corresponds to an approximate set of site specific etch rates.
  • 23
    • 85034302320 scopus 로고    scopus 로고
    • note
    • Experimentally, we must assume that the macroscopic step orientation is equal to the average orientation of steps in a single STM topograph. Since this approximation can easily be off by 5°, we measure D with respect to the best fit line - this measurement is independent the macroscopic orientation.
  • 24
    • 85034296057 scopus 로고    scopus 로고
    • note
    • Since our simulations have circular bounds, this could be avoided; however, we have tried to make our analysis equally applicable to experiment and simulation.
  • 25
    • 2542427116 scopus 로고
    • edited by J. Grabmaier Springer, Berlin
    • For a review, see R. B. Heimann, in Silicon Chemical Etching, edited by J. Grabmaier (Springer, Berlin, 1982), p. 173.
    • (1982) Silicon Chemical Etching , pp. 173
    • Heimann, R.B.1
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    • edited by R. H. Doremus, B. W. Roberts, and D. Turnbull Wiley, New York
    • F. C. Frank, in Growth and Perfection of Crystals, edited by R. H. Doremus, B. W. Roberts, and D. Turnbull (Wiley, New York, 1958), p. 411.
    • (1958) Growth and Perfection of Crystals , pp. 411
    • Frank, F.C.1
  • 28
    • 85034288757 scopus 로고    scopus 로고
    • note
    • In this regime, step etching occurs through the nucleation of two kinks on an otherwise straight step. See Sec. III A.
  • 29
    • 85034277246 scopus 로고    scopus 로고
    • note
    • From our definition of time, it would take, on average, one unit of time to etch a monolayer of a surface composed entirely of sites etching with rate k=1.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.