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W. H. Press, S. A. Teukolsky, W. T. Vetterling, and B. P. Flannery, Numerical Recipes in C, 2nd ed. (Cambridge University Press, Cambridge, 1992), Chap. 7. The Monte Carlo simulation used the function "ran1" to generate pseudorandom numbers.
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85034287931
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note
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In this context, the reaction mechanism (e.g., step flow, pit nucleation and growth) corresponds to an approximate set of site specific etch rates.
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23
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85034302320
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note
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Experimentally, we must assume that the macroscopic step orientation is equal to the average orientation of steps in a single STM topograph. Since this approximation can easily be off by 5°, we measure D with respect to the best fit line - this measurement is independent the macroscopic orientation.
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24
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85034296057
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note
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Since our simulations have circular bounds, this could be avoided; however, we have tried to make our analysis equally applicable to experiment and simulation.
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25
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2542427116
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edited by J. Grabmaier Springer, Berlin
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For a review, see R. B. Heimann, in Silicon Chemical Etching, edited by J. Grabmaier (Springer, Berlin, 1982), p. 173.
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(1982)
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Heimann, R.B.1
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26
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0002378338
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edited by R. H. Doremus, B. W. Roberts, and D. Turnbull Wiley, New York
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F. C. Frank, in Growth and Perfection of Crystals, edited by R. H. Doremus, B. W. Roberts, and D. Turnbull (Wiley, New York, 1958), p. 411.
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(1958)
Growth and Perfection of Crystals
, pp. 411
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Frank, F.C.1
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28
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85034288757
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note
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In this regime, step etching occurs through the nucleation of two kinks on an otherwise straight step. See Sec. III A.
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29
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85034277246
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note
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From our definition of time, it would take, on average, one unit of time to etch a monolayer of a surface composed entirely of sites etching with rate k=1.
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