Structural properties of thin films of high dielectric constant materials on silicon

Microelectronic Engineering

Volumn 48, Issue 1, 1999, Pages 287-290

  Lu, H C ^a   Yasuda, N ^a,c   Garfunkel, E ^a   Gustafsson, T ^a   Chang, J P ^b   Opila, R L ^b   Alers, G ^b  

^a RUTGERS UNIVERSITY   (United States)

^b NOKIA RESEARCH CENTER   (United States)

^c TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; COMPOSITION EFFECTS; INTERFACES (MATERIALS); OXIDATION; PERMITTIVITY; SEMICONDUCTING SILICON; SURFACE ROUGHNESS; THERMODYNAMIC STABILITY; ULTRATHIN FILMS;

COMPOSITIONALLY GRADED OXIDES; MEDIUM ENERGY ION SCATTERING (MEIS);

DIELECTRIC FILMS;

EID: 0033190179     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(99)00390-1     Document Type: Article

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