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Defect and Diffusion Forum

Volumn 200-202, Issue , 2002, Pages 1-28

Thick GaN films grown on sapphire: Defects in highly mismatched systems

(3) Paskova, T a Valcheva, E a Monemar, B a

a LINKÖPING UNIVERSITY (Sweden)

Author keywords

3D defects; GaN; Microstructure; Mismatched systems; Point defects

Indexed keywords

CATHODOLUMINESCENCE; CRYSTAL MICROSTRUCTURE; CRYSTALLOGRAPHY; FILM GROWTH; MORPHOLOGY; OPTICAL PROPERTIES; POINT DEFECTS; RELAXATION PROCESSES; SAPPHIRE; THICK FILMS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY;

HYDRIDE VAPOR EPITAXY; MISMATCHED SYSTEMS;

GALLIUM NITRIDE;

EID: 0036132379 PISSN: 10120386 EISSN: 16629507 Source Type: Journal
DOI: 10.4028/www.scientific.net/ddf.200-202.1 Document Type: Review

Times cited : (5)

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