Observation of coreless dislocations in α-GaN

Journal of Crystal Growth

Volumn 178, Issue 1-2, 1997, Pages 201-206

  Cherns, D ^a   Young, W T ^a   Steeds, J W ^a   Ponce, F A ^b   Nakamura, S ^c  

^a UNIVERSITY OF BRISTOL   (United Kingdom)

^b PALO ALTO RESEARCH CENTER   (United States)

^c NICHIA CORPORATION   (Japan)

Author keywords

Chemical vapour deposition; Convergent beam electron diffraction; Dislocations; Semiconductors; Thin film growth

Indexed keywords

CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); ELECTRON DIFFRACTION; FILM GROWTH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHASE EQUILIBRIA; SAPPHIRE; SEMICONDUCTOR GROWTH; THIN FILMS; VECTORS; NITRIDES;

GALLIUM NITRIDES; LARGE ANGLE CONVERGENT BEAM ELECTRON DIFFRACTION; CONVERGENT BEAM ELECTRON DIFFRACTION; CORELESS DISLOCATION;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0031150313     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(97)00081-X     Document Type: Article

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