Improvement of crystalline quality of group III nitrides on sapphire using low temperature interlayers

Materials Research Society Symposium - Proceedings

Volumn 537, Issue , 1999, Pages

  Amano, H ^a   Iwaya, M ^a   Hayashi, N ^a   Kashima, T ^a   Katsuragawa, M ^a   Takeuchi, T ^a   Wetzel, C ^a   Akasaki, I ^a  

^a MEIJO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL STRUCTURE; LOW TEMPERATURE EFFECTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

CRYSTALLINE QUALITY; LOW TEMPERATURE INTERLAYERS; STRUCTURAL PROPERTIES;

EPITAXIAL GROWTH;

EID: 0033313750     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (18)

1. H. P. Maruska and J. J. Tietjen, Appl. Phys. Lett., 15, 327 (1969).
2. J. I. Pankove, E. A. Miller, D. Richman and J. E. Berkeyheiser, J. Lumin., 4, 63 (1971).
3. B. Monemar , Phys. Rev. BIO, 676 (1974).
4. H. Amano, N. Sawaki, I. Akasaki and Y. Toyoda, Appl. Phys. Lett. 48, 353 (1986).
5. S. Nakamura, T. Mukai and M. Scnoh: J. Appl. Phys. 71, 5543 (1992).
6. H. Amano, M. Kito, K. Hiramatsu, N. Sawaki and I. Akasaki, Jpn. J. Appl. Phys., 28, L2112 (1989).
7. S. Nakamura, M. Senoh and T. Mukai, Jpn. J. Appl. Phys., 30, L1708 (1992).
8. I. Akasaki, Proc. Mater. Res. Soc. 482, 3 (1998).
9. S. D. Lester, F. A. Ponce, M. G. Craford and D. A. Steigerwald, Appl. Phys. Lett., 66, 1249 (1995).
10. X. J. Ning, F. R. Chien, P. Pirouz, J. W. Yang and M. A. Khan, J. Mater. Res., 11, 580 (1996).
11. T. Sugahara, H. Sato, M. Hao, Y. Naoi, S. Kurai, S. Tottori, K. Yamashita, K. Nishino, L. T. Romano and S. Sakai, Jpn. J. Appl. Phys., 37, L398 (1998).
12. L. Eastman, K. Chu, W. Schaff, M. Murphy and N. G. Weimann, Internet J. of Nitride Semiconductor Re, 2, 17(1997).
13. M. Iwaya, T. Takeuchi, S. Yamaguchi, C. Wetzel, H. Amano and I. Akasaki, Jpn. .J. Appl. Phys. 37, L316 (1998).
14. M. Iwaya, N. Hayashi, T. Takeuchi, T. Kashima, M. Katsuragwa, H. Kato, S. Yamaguchi, C. Wetzel, H. Amano and I.Akasaki, Jpn. J. Appl. Phys. (to be submitted).
15. H. Amano, M. Iwaya, T. Kashima, M. Katsuragawa, I. Akasaki, J. Han, S. Hearne, J. A. Flora, E. Chason and J. Figiel, Jpn. J. Appl. Phys., 37, (1998)L1540.
16. K. Hirosawa, K. Hiramatsu, N. Sawaki and I. Akasaki, Jpn. J. Appl. Phys., 32, L1039 (1993).
17. J. Flora, E. Chason, S. Lee, R. Twesten, R. Hwang and L. Freud, J. Electron. Mater., 26, 969 (1997).
18. S. Hearne, E. Chason, J. Han, J. Flora, J. Figiel, J. Hunter, H. Amano and I. Tseng, Appl. Phys. Lett., (to be published).