Effect of Si doping of metalorganic chemical vapor deposition-GaN templates on the defect arrangement in hydride vapor phase epitaxy-GaN overgrown layers

Journal of Applied Physics

Volumn 88, Issue 10, 2000, Pages 5729-5732

  Paskova, T ^a   Valcheva, E ^a   Birch, J ^a   Tungasmita, S ^a   Persson, P O A ^a   Beccard, R ^b   Heuken, M ^b   Monemar, B ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b AIXTRON AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000808151     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1318366     Document Type: Article

References (16)

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