Hydride vapour phase homoepitaxial growth of GaN on MOCVD-grown 'templates'

Materials Research Society Symposium - Proceedings

Volumn 595, Issue , 2000, Pages

  Paskova, T ^a   Tungasmita, S ^a   Valcheva, E ^a   Svedberg, E B ^a   Arnaudov, B ^a   Evtimova, S ^a   Persson, P A ^a   Henry, A ^a   Beccard, R ^a   Heuken, M ^a   Monemar, B ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CATHODOLUMINESCENCE; CRYSTAL STRUCTURE; ELECTRIC PROPERTIES; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; SEMICONDUCTOR DOPING; VAPOR PHASE EPITAXY;

CATHODOLUMINESCENCE MEASUREMENT; GALLIUM NITRIDE; HALL MEASUREMENT; HYDRIDE VAPOR PHASE EPITAXY;

FILM GROWTH;

EID: 0033705809     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (12)