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Volumn 82, Issue 1-3, 2001, Pages 35-38

Impact of MOCVD-GaN 'templates' on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN

Author keywords

Doping distribution; GaN; HVPE; Strain

Indexed keywords

CARRIER CONCENTRATION; CATHODOLUMINESCENCE; ELECTRON TRANSITIONS; HYDRIDES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; RAMAN SPECTROSCOPY; RELAXATION PROCESSES; SAPPHIRE; SEMICONDUCTOR DOPING; STRAIN; TRANSMISSION ELECTRON MICROSCOPY; VAPOR PHASE EPITAXY;

EID: 0035933208     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(00)00676-0     Document Type: Article
Times cited : (6)

References (7)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.