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Volumn 82, Issue 1-3, 2001, Pages 35-38
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Impact of MOCVD-GaN 'templates' on the spatial non-uniformities of strain and doping distribution in hydride vapour phase epitaxial GaN
d
AIXTRON AG
(Germany)
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Author keywords
Doping distribution; GaN; HVPE; Strain
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Indexed keywords
CARRIER CONCENTRATION;
CATHODOLUMINESCENCE;
ELECTRON TRANSITIONS;
HYDRIDES;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
RAMAN SPECTROSCOPY;
RELAXATION PROCESSES;
SAPPHIRE;
SEMICONDUCTOR DOPING;
STRAIN;
TRANSMISSION ELECTRON MICROSCOPY;
VAPOR PHASE EPITAXY;
HYDRIDE VAPOR PHASE EPITAXIAL;
SPATIAL NON-UNIFORMITIES;
SEMICONDUCTING GALLIUM COMPOUNDS;
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EID: 0035933208
PISSN: 09215107
EISSN: None
Source Type: Journal
DOI: 10.1016/S0921-5107(00)00676-0 Document Type: Article |
Times cited : (6)
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References (7)
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